张利民
2021-05-01 核学院
姓名：张利民
职称：教授，博士研究生导师
所在研究所：辐射物理与核材料研究所
通讯地址：甘肃省兰州市东岗西路199号，9001诚信金沙9001cc，730000
电子邮件：zhanglm@lzu.edu.cn
研究方向：
主要从事先进核能材料与半导体材料离子辐照损伤效应的研究，具体包括离子束辐照导致纳米晶SiC结构及力学性质的变化；载能离子束在GaN、InN、InGaN薄膜中引起微结构以及光学和电学性质的变化；高放废物玻璃陶瓷辐照效应的研究等。先后主持和参与国家自然科学基金项目6项（其中主持2项），参与工信部高放废物地质处置专项1项，在JACerS、JPD、JAP、和JNM等期刊上发表学术论文30余篇。
教育简历（按时间倒序排序）：
1. 2003/09-2008/06，9001诚信金沙9001cc，9001诚信金沙9001cc，硕博连读研究生
2. 1999/09-2003/06，9001诚信金沙9001cc，物理科学与技术学院，本科生
工作简历（按时间倒序排序）：
1. 2012/05-至今，9001诚信金沙9001cc，9001诚信金沙9001cc，副教授
2. 2014/06-2015/05，美国西北太平洋国家实验室，离子加速器实验室，访问学者
3. 2008/07-2012/05，9001诚信金沙9001cc，9001诚信金沙9001cc，讲师
4. 2009/12-2012/03，中国科学院近代物理研究所，博士后
主讲课程：
《核工程导论》、《反应堆原理》
主要科研成果（按时间倒序排序。其中，本人姓名加粗显示，通讯作者姓名后加注上标“*”）：
1. Limin Zhang*, Weilin Jiang*, Chenglong Pan, Raul C. Fadanelli, Wensi Ai, Liang Chen, Tieshan Wang, Raman study of amorphization in nanocrystalline 3C-SiC irradiated with C+ and He+ ions, J. Raman Spectrosc., 2019, 50: 1197-1204
2. Limin Zhang*, Weilin Jiang*, Wensi Ai, Liang Chen, Chenlong Pan, Tieshan Wang, Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures, J. Am. Ceram. Soc.2019, 102: 448-455.
3. W.S. Ai, L.M. Zhang*, W. Jiang, T.S. Wang, Raman study of InxGa1-xN (x=0.32-0.9) films irradiated with Xe ions at room temperature and 773 K, Nucl. Instrum. Methods B, 2018, 415:48-53.
4. Limin Zhang*, Weilin Jiang*, Wensi Ai, Liang Chen, Tieshan Wang, Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures, J. Nucl. Mater. 2018, 505:249-254.
5. L.M. Zhang*, W. Jiang, R.C. Fadanelli, W.S. Ai, J.X. Peng, T.S. Wang, C.H. Zhang, Microstructural response of InGaN to swift heavy ion irradiation, Nucl. Instrum. Methods B, 2016, 388:30-34.
6. Limin Zhang*, Weilin Jiang, Amila Dissanayake, Jinxin Peng, Wensi Ai, Jiandong Zhang, Zihua Zhu, Tieshan Wang, Vaithiyalingam Shutthanandan, Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x =0.32？1.0) single crystals, J. Appl. Phys, 2016, 199: 244704.
7. Limin Zhang*, Weilin Jiang*, Amila Dissanayake, Tamas Varga, Jiandong Zhang, Zihua Zhu, Dehong Hu, Haiyan Wang, Charles H Henager Jr, Tieshan Wang, Grain growth of nanocrystalline 3C-SiC under Au ion irradiaton at elevated temperatures, J. Phys. D: Appl. Phys., 2016, 49: 035304.
8. L.M. Zhang*, R.C. Fadanelli, P. Hu, J.T. Zhao, T.S. Wang, C.H. Zhang, Structural damage in InGaN induced by MeV heavy ion irradiation, Nucl. Instrum. Methods B, 2015, 356-357: 53-56.
9. L.M. Zhang*, C.X. Li, J.T. Zhao, K.J. Yang, G.F. Zhang, T.S. Wang, C.H. Zhang, Study of radiation damage in InGaN and AlGaN films induced by 8.9 MeV Bi33+ ions, Nucl. Instrum. Methods B, 2013, 305: 1-4.
10. L.M. Zhang*, C.H. Zhang, C.X. Li, Y. Song, Y.F. Jin, T.S. Wang, Surface morphological and compositional changes of GaN films induced by swift heavy-ion irradiations, Eur. Phys. J. Appl. Phys., 2012, 59:30101.
11. L.M. Zhang, C.H. Zhang*, L.Q. Zhang, X. J. Jia, T.D. Ma, Y. Song, Y.T. Yang, B.S. Li, Y.F. Jin, Structural and optical study of irradiation effect in GaN epilayers induced by 308 MeV Xe ions, Nucl. Instrum. Methods B, 2011, 269: 1782-1785.
12. L.M. Zhang, C.H. Zhang*, L.Q. Zhang, X. J. Jia, L.H. Han, C.L. Xu, Y. Zhang, Y.F. Jin, HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV Kr ions, Nucl. Instrum. Methods B, 2011, 269: 1063-1066.
